How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy

被引：65

作者：

Daudin, B

Feuillet, G

Hubner, J

Samson, Y

Widmann, F

Philippe, A

Bru-Chevallier, C

Guillot, G

Bustarret, E

Bentoumi, G

Deneuville, A

机构：

[1] Universite Joseph Fourier, SPMM, CEA Grenoble, Dept Rech Fondamentale Mat Condensee, F-38054 Grenoble 9, France

[2] Inst Natl Sci Appl Lyon, Phys Mat Lab, CNRS, UMR5511, F-69621 Villeurbanne, France

[3] CNRS, Etud Proprietes Elect Solides Lab, F-38042 Grenoble 9, France

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 84卷 / 04期

关键词：

D O I：

10.1063/1.368296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy (MBE) of cubic GaN on SiC films deposited by chemical vapor deposition on Si has been investigated by reflection high-energy electron diffraction, x-ray diffraction, photoluminescence, and micro-Raman spectroscopy. The wurtzite/zinc-blende ratio, indicative of the material quality, has been found to depend on both the initial substrate roughness and the N/metal ratio impinging on the surface. The results were consistently analyzed by assuming that the MBE growth of cubic GaN is mainly governed by the impinging active N flux, which directly determines the mean-free path of Ga adatoms. (C) 1998 American Institute of Physics. [S0021-8979(98)08016-5].

引用

页码：2295 / 2300

页数：6

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