Threshold conditions for an ultraviolet wavelength GaN quantum-well laser

被引：8
作者：
Chow, WW [1 ]
Crawford, MH
Girndt, A
Koch, SW
机构：
[1] Sandia Natl Labs, Albuquerque, NM USA
[2] Univ Marburg, Dept Phys, D-35032 Marburg, Germany
[3] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany
来源：
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1998年 / 4卷 / 03期
关键词：
laser theory; many-body effects; nitride materials/devices; quantum-well lasers; semiconductor device modeling; semiconductor lasers;
D O I：
10.1109/2944.704111
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes an analysis of the threshold conditions for a GaN-AlGaN strained quantum-well (QW) laser. Gain spectra are computed using a many-body microscopic laser theory. The spontaneous emission rates are extracted from the gain spectra using a phenomenological expression based on energy conservation arguments. From the gain and spontaneous emission spectra, threshold current densities are estimated. Inhomogeneous broadening due to spatial variations in QW thickness are included in the analysis. Gain-current characteristics are determined for a number of laser heterostructure designs where the GaN QW width and Al composition of the AlGaN barrier material are varied.
引用
收藏
页码：514 / 519
页数：6
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