GaN/BAlN heterostructure grown on a (0001)6H-SiC substrate by metalorganic vapor phase epitaxy

A GaN/(B,Al)N heterostructure has been successfully grown on a (0 0 0 1)6H-SiC substrate using low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The X-ray diffraction (XRD) patterns of (0 0 0 2)GaN, (0 0 0 2)BAlN and (0 0 0 6)6H-SiC were observed from the GaN/BAlN heterostructure. Photoluminescence spectra of GaN have also been observed at room temperature under 325 nm light excitation from GaN/BAlN, GaN/BN and thick GaN (3 mu m) grown on 6H-SiC. The full-width at half-maximum (FWHM) of the emission was nearly equal to 75 meV, the peak wavelength was located near the GaN's band edge. This indicates that the composition change region in the interface layers is small. (C) 1998 Elsevier Science B.V. All rights reserved.