Characterization of a positive chemically amplified photoresist for process control

被引：8

作者：

Jakatdar, N ^{[1
]}

Niu, XH ^{[1
]}

Spanos, CJ ^{[1
]}

Romano, A ^{[1
]}

Bendik, J ^{[1
]}

Kovacs, R ^{[1
]}

Hill, S ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XII | 1998年 / 3332卷

关键词：

Chemically Amplified Resists; Design of Experiments; process control; photolithography; Fourier Transform Infrared Spectroscopy; deprotection induced thickness loss; DW photoresist; photoactive compound concentration; in-situ;

D O I：

10.1117/12.308771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Chemically Amplified Resists (CARs) are much less observable than their i-line counterparts due to the absence of photoresist actinic absorbency. CARs however, exhibit resist thinning during the Post-Exposure Bake process (PEB). A Design of Experiments (DOE) technique was employed around the exposure and the FEB temperature for a commercial DUV photoresist. A Fourier Transform Infrared (FTIR) technique was used to measure the deprotection of the CARs after the FEB step while standard interferometry techniques were used for exposed area thickness loss measurements after the FEB step. Our analysis indicates that exposed area thickness loss is strongly correlated to the deprotection of the photoresist, so that thickness loss can serve as a reliable deprotection indicator and can hence be possibly used as an observable for control of the photolithography sequence.

引用

页码：586 / 593

页数：8