Nano-roughening n-side surface of AlGaInP-based LEDs for increasing extraction efficiency

被引:12
作者
Lee, Y. J.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
Hsu, T. C.
Hsieh, M. H.
Jou, M. J.
Lee, B. J.
机构
[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[3] Epistar Co Ltd, R&D Div, Hsinchu 300, Taiwan
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2007年 / 138卷 / 02期
关键词
chemical wet etching; AlGaInP-based LEDs; nano-roughening;
D O I
10.1016/j.mseb.2006.11.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A chemical wet etching technique is presented to form a nano-roughened surface with triangle-like morphology on n-side-up AlGaInP-based LEDs fabricated by adopting adhesive layer bonding scheme. A simple and commonly used H3PO4-based solution was applied for chemical wet etching. The morphology of nano-roughened surfaces is analyzed by the atomic force microscope (AFM) and significantly related to the enhancement factor of the LED output power. The output power shows 80% increase after optimizing the nano-roughened morphology of n-side surface, as compared to the ordinary flat surface LED. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:157 / 160
页数:4
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