Advances in strained layers and strained-layer devices

被引：0

作者：

Van Hoof, C ^{[1
]}

Genoe, J ^{[1
]}

Nemeth, S ^{[1
]}

Jain, SC ^{[1
]}

Borghs, G ^{[1
]}

Mertens, R ^{[1
]}

Van Overstraeten, R ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

strain; mid-IR; lasers;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

During the last 25 years (after the growth of the first pseudomorphic GeSi strained layers on Si) we have seen a steady accumulation of new materials and devices with enhanced performance made possible by strain. Significant advances have been made in modelling and determining the nonuniform strain using Raman technique. Until recently short wavelength (violet to green) and mid-IR (2 to 5 mu m) regions of the spectrum were not accessible to the photonic devices. Short wavelength Light Emitting Diodes and Laser Diodes have been developed using III-Nitride and II-VI strained layers. Auger recombination limits the performance of the mid-IR lasers. Strain induced changes in the band-structure have been exploited to suppress the Auger recombination. Improved mid-IR lasers using Sb based III-V semiconductor strained layers have been fabricated. Computer simulations show that CMOS circuits fabricated with strained layer GeSi transistors will have considerably improved performance.

引用

页码：554 / 562

页数：9