Numerical Simulation of 1.3-μm Vertical-External-Cavity Surface-Emitting Lasers

被引：0

作者：

Nakwaski, Wlodzimierz ^{[1
]}

Sarzala, Robert P. ^{[1
]}

Sokol, Adam K. ^{[1
]}

机构：

[1] Lodz Univ Technol, Inst Phys, Photon Grp, PL-90924 Lodz, Poland

来源：

2014 16TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) | 2014年

关键词：

VECSEL; SDL; disk laser; GaInNAs; simulation; numerical model; MU-M;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Paper presents results of our numerical simulation of an operation of the GaInNAs/GaAs vertical-external-cavity surface-emitting lasers (VECSELs) emitting the 1.3-mu m radiation. Thermal properties of two various VECSEL assembly configurations have been compared with the aid of the finite-element-method model. Moreover, optical properties of resonant and anti-resonant designs of laser sub-cavity have been analysed and compared.

引用

页数：4

共 3 条

[1] 0.6 WCWGaInNAsvertical external-cavity surface emitting laser operating at 1.32 μm
Hopkins, JM
Smith, SA
Jeon, CW
Sun, HD
Burns, D
Calvez, S
Dawson, MD
Jouhti, T
Pessa, M
[J]. ELECTRONICS LETTERS, 2004, 40 (01) : 30 - 31
[2] Passively modelocked GaInNAs VECSEL at centre wavelength around 1.3 μm
Rutz, A.
Liverini, V.
Maas, D. J. H. C.
Rudin, B.
Bellancourt, A.-R.
Schoen, S.
Keller, U.
[J]. ELECTRONICS LETTERS, 2006, 42 (16) : 926 - 928
[3] Thermal management of GaInNAs/GaAs VECSELs
Sokol, A. K.
Sarzala, R. P.
[J]. OPTO-ELECTRONICS REVIEW, 2013, 21 (02) : 191 - 198

← 1 →