Alignment tolerant, low voltage, 0.23 V.cm, push-pull silicon photonic switches based on a vertical pn junction

被引：11

作者：

Zanzi, Andrea ^{[1
]}

Vagionas, Christos ^{[3
]}

Griol, Amadeu ^{[1
]}

Rosa, Alvaro ^{[2
]}

Lechago, Sergio ^{[1
]}

Moralis-Pegios, Miltiadis ^{[3
]}

Vyrsokinos, Konstantinos ^{[3
]}

Pleros, Nikos ^{[3
]}

Kraft, Jochen ^{[4
]}

Sidorov, Victor ^{[4
]}

Sirbu, Bogdan ^{[5
]}

Tekin, Tolga ^{[5
]}

Sanchis, Pablo ^{[1
]}

Brimont, Antoine ^{[1
]}

机构：

[1] Univ Politecn Valencia, Valencia Nanophoton Technol Ctr, E-46022 Valencia, Spain

[2] DAS Photon, Valencia 46022, Spain

[3] Aristotle Univ Thessaloniki, Thessaloniki 54124, Greece

[4] Ams AG, A-8141 Premstaetten, Austria

[5] Fraunhofer Inst Reliabil & Microintegrat IZM, D-13355 Berlin, Germany

来源：

OPTICS EXPRESS | 2019年 / 27卷 / 22期

关键词：

OPTICAL SWITCH; MACH-ZEHNDER; CARRIER-DEPLETION; LOW-POWER; MODULATOR;

D O I：

10.1364/OE.27.032409

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this paper, we present the design, fabrication and characterization of a carrier depletion silicon-photonic switch based on a highly doped vertical pn junction. The vertical nature of the pn junction enables the device to exhibit a modulation efficiency as high as 0.23 V.cm. Fast switching times of 60ps are achieved in a lumped configuration. Moreover, the process flow is highly tolerant to fabrication deviations allowing a seamless transfer to the 350 nm process node of a commercial complementary-metal-oxide semiconductor (CMOS) fbundry. Overall, this work showcases the possibility of fabricating highly efficient carrier depletion-based silicon photonic switches using medium resolution lithography. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：32409 / 32426

页数：18

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