A physics based model for the RTD quantum capacitance

被引:39
|
作者
Lake, R [1 ]
Yang, JJ [1 ]
机构
[1] Univ Calif Riverside, Dept Elect Engn, Riverside, CA 92521 USA
关键词
capacitance; circuit modeling; resonant tunnel diodes; semiconductor device modeling; tunnel diode oscillators;
D O I
10.1109/TED.2003.811390
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A simple derivation of the form for the compact model of the quantum capacitance in a resonant tunneling diode (RTD) is presented. The quantum capacitance is shown to reduce the, resistive cutoff frequency. The implementation of the model into SPICE is described. The distorting effect of the strongly nonlinear quantum capacitance on an oscillator circuit is demonstrated in a SPICE simulation. The nonlinearity becomes important for the highest frequency applications when the RTD capacitance is comparable to the capacitance in the rest of the circuit.
引用
收藏
页码:785 / 789
页数:5
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