Total Dose Homogeneity of Commercial off the Shelf biCMOS and Bipolar Voltage References at Low Dose Rate

被引：3

作者：

Hiemstra, D. M. ^{[1
]}

Shi, S. ^{[2
]}

Li, Z. ^{[2
]}

Chen, L. ^{[2
]}

Kirischian, V. ^{[1
]}

机构：

[1] MDA, Brampton, ON L6S 4J3, Canada

[2] Univ Saskatchewan, Dept Elect & Comp Engn, Saskatoon, SK, Canada

来源：

2019 IEEE RADIATION EFFECTS DATA WORKSHOP (REDW) | 2019年

关键词：

voltage reference; biCMOS; bipolar; low dose rate sensitivity;

D O I：

10.1109/redw.2019.8906620

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

Total dose homogeneity of biCMOS and bipolar voltage references at low dose rate is presented. Radiation hardness assurance implications and performance in the space radiation environment are discussed.

引用

页码：11 / 13

页数：3

共 21 条

[1]

Analog Devices, PREC MICR LOW DROP V

[2]

Analog Devices, LT1790 MICR SOT 23 L

[3]

[Anonymous], 2012, Standard ECSS-Q-ST-60-15C

[4]

[Anonymous], 1996, RAD DESIGN REQUIREME

[5] Single-event transients in bipolar linear integrated circuits [J].

Buchner, Stephen ;

McMorrow, Dale .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2006, 53 (06) :3079-3102

[6]

Chen D., 2010, IEEE RAD EFFECTS DAT, P111

[7] Plastic packaging and burn-in effects on ionizing dose response in CMOS microcircuits [J].

Clark, SD ;

Bings, JP ;

Maher, MC ;

Williams, MK ;

Alexander, DR ;

Pease, RL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1995, 42 (06) :1607-1614

[8] RESPONSE OF ADVANCED BIPOLAR PROCESSES TO IONIZING-RADIATION [J].

ENLOW, EW ;

PEASE, RL ;

COMBS, W ;

SCHRIMPF, RD ;

NOWLIN, RN .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1991, 38 (06) :1342-1351

[9]

ESA, 2018, SPENVIS

[10] INTERPLANETARY PROTON FLUENCE MODEL - JPL 1991 [J].

FEYNMAN, J ;

SPITALE, G ;

WANG, J ;

GABRIEL, S .

JOURNAL OF GEOPHYSICAL RESEARCH-SPACE PHYSICS, 1993, 98 (A8) :13281-13294

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