Modulation and optoelectronic properties of GaN-based light-emitting diodes on GaN template

被引：5

作者：

Lin, Shan ^{[1
,2
]}

Cao, Haicheng ^{[1
,2
]}

Li, Jing ^{[1
,2
]}

Sun, Xuejiao ^{[1
,2
]}

Xiu, Huixin ^{[3
]}

Zhao, Lixia ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Semicond Lighting Res & Dev Ctr, Inst Semicond, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[3] Univ Shanghai Sci & Technol, Shanghai 200093, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2018年 / 11卷 / 12期

基金：

中国国家自然科学基金;

关键词：

QUANTUM-WELLS; BANDWIDTH; LEDS;

D O I：

10.7567/APEX.11.122101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the modulation responses and optoelectronic properties of light-emitting diodes (LEDs) grown on free-standing (0001) GaN. These LEDs have a larger modulation bandwidth than those grown on sapphire at a higher current density, and a maximum of -3 dB modulation bandwidth of 510 MHz was achieved, which is 1.7 times larger compared to LEDs grown on sapphire. In addition, due to the lower substrate temperature, there may be an increase in the indium that is incorporated into the active region as well as the point defects of the LEDs grown on GaN, which will influence the optoelectronic properties. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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