Effects of Residual Stress Distribution on Interfacial Adhesion of Magnetron Sputtered AlN and AlN/Al Nanostructured Coatings on a (100) Silicon Substrate

被引:25
作者
Ali, Rashid [1 ]
Renzelli, Marco [2 ]
Khan, M. Imran [1 ]
Sebastiani, Marco [3 ]
Bemporad, Edoardo [3 ]
机构
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Fac Mat & Chem Engn, Swabi 23640, Kpk, Pakistan
[2] LFoundry Srl, Via Pacinotti 7, I-67051 Laquila, Italy
[3] Univ Roma Tre, Dept Engn, Via Vasca Navale 79, I-00146 Rome, Italy
来源
NANOMATERIALS | 2018年 / 8卷 / 11期
基金
欧盟地平线“2020”;
关键词
physical vapor deposition; magnetron sputtering; AlN/Al coating; silicon substrate; residual stresses; wafer curvature method; nanoscale residual stress profiling; indentation failure modes; nanoindentation adhesion; FRACTURE-TOUGHNESS; INDENTATION FRACTURE; THIN-FILMS; DESIGN; CRACK;
D O I
10.3390/nano8110896
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The present study investigated the influence of nanoscale residual stress depth gradients on the nano-mechanical behavior and adhesion energy of aluminium nitride (AlN) and Al/AlN sputtered thin films on a (100) silicon substrate. By using a focused ion beam (FIB) incremental ring-core method, the residual stress depth gradient was assessed in the films in comparison with standard curvature residual stress measurements. The adhesion energy was then quantified by using a nanoindentation-based model. Results showed that the addition of an aluminum layer gave rise to additional tensile stress at the coating/substrate interface, which can be explained in terms of the differences of thermal expansion coefficients with the silicon substrate. Therefore, the coatings without the Al layer showed better adhesion because of a more homogeneous compressive residual stress in comparison with the coating having the Al layer, even though both groups of coatings were produced under the same bias voltage. Results are discussed, and some general suggestions are made on the correlation between coating/substrate property combinations and the adhesion energy of multilayer stacks. The results suggested that the Al bond layer and inhomogeneous residual stresses negatively affected the adhesion of AlN to a substrate such as silicon.
引用
收藏
页数:16
相关论文
共 34 条
[1]   Review Article: Stress in thin films and coatings: Current status, challenges, and prospects [J].
Abadias, Gregory ;
Chason, Eric ;
Keckes, Jozef ;
Sebastiani, Marco ;
Thompson, Gregory B. ;
Barthel, Etienne ;
Doll, Gary L. ;
Murray, Conal E. ;
Stoessel, Chris H. ;
Martinu, Ludvik .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2018, 36 (02)
[2]  
Advanced technical ceramics, 2005, 1071 BS DD CENTS
[3]   Influence of Ti-TiN multilayer PVD-coatings design on residual stresses and adhesion [J].
Ali, R. ;
Sebastiani, M. ;
Bemporad, E. .
MATERIALS & DESIGN, 2015, 75 :47-56
[4]   A CRITICAL-EVALUATION OF INDENTATION TECHNIQUES FOR MEASURING FRACTURE-TOUGHNESS .1. DIRECT CRACK MEASUREMENTS [J].
ANSTIS, GR ;
CHANTIKUL, P ;
LAWN, BR ;
MARSHALL, DB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (09) :533-538
[5]   A critical comparison between XRD and FIB residual stressmeasurement techniques in thin films [J].
Bemporad, E. ;
Brisotto, M. ;
Depero, L. E. ;
Gelfi, M. ;
Korsunsky, A. M. ;
Lunt, A. J. G. ;
Sebastiani, M. .
THIN SOLID FILMS, 2014, 572 :224-231
[6]   Aluminum nitride thin film growth and applications for heat dissipation [J].
Bian, Yingbin ;
Liu, Moning ;
Ke, Genshui ;
Chen, Yigang ;
DiBattista, Jim ;
Chan, Eason ;
Yang, Yimou .
SURFACE & COATINGS TECHNOLOGY, 2015, 267 :65-69
[7]   Nano-indentation of coatings [J].
Bull, SJ .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2005, 38 (24) :R393-R413
[8]   Effect of ductile layers in mechanical behaviour of TiAlN thin coatings [J].
Castanho, JM ;
Vieira, MT .
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2003, 143 :352-357
[9]   Indentation fracture and toughness assessment for thin optical coatings on glass [J].
Chen, J. ;
Bull, S. J. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (18) :5401-5417
[10]   The origin of stresses in magnetron-sputtered thin films with zone T structures [J].
Daniel, R. ;
Martinschitz, K. J. ;
Keckes, J. ;
Mitterer, C. .
ACTA MATERIALIA, 2010, 58 (07) :2621-2633