A concept to relate wire bonding parameters to bondability and ball bond reliability

被引：14

作者：

Liang, ZN

Kuper, FG

Chen, MS

机构：

[1] Philips Semicond, NL-6534 AE Nijmegen, Netherlands

[2] Philips Semicond, PSK, NEPZ, Kaohsiung, Taiwan

来源：

MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 6-8期

关键词：

D O I：

10.1016/S0026-2714(98)00093-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of wire bonding parameters on bondability and ball bond reliability have been investigated. Bondability is characterized by ball shear stress (ball shear force per unit area) and ball bond reliability by median time to failure during in-situ ball bond degradation measurements. By introducing the concept of a reduced bonding parameter (RBP), a combination of all bonding parameters, we are able to relate the bonding parameters to bondability and ball bond reliability. With the appropriate REP, ball sheer force, ball shear stress, and ball bond reliability appear to be well-behaved functions of the REP for a wide range of settings. This provides us with simple analytical tool for optimizing bonding parameter windows. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1287 / 1291

页数：5