Single OR molecule and OR atomic circuit logic gates interconnected on a Si(100)H surface

被引：26

作者：

Ample, F. ^{[1
]}

Duchemin, I. ^{[2
,3
]}

Hliwa, M. ^{[2
,3
,4
]}

Joachim, C. ^{[1
,2
,3
]}

机构：

[1] ASTAR, IMRE, Singapore 117602, Singapore

[2] CNRS, CEMES, Nanosci Grp, F-31055 Toulouse, France

[3] CNRS, CEMES, MANA Satellite, F-31055 Toulouse, France

[4] Univ Hassan II Mohammedia, Fac Sci Ben MSik, Casablanca, Morocco

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2011年 / 23卷 / 12期

关键词：

CONDUCTANCE; ELECTRONICS; ADSORPTION; SILICON;

D O I：

10.1088/0953-8984/23/12/125303

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron transport calculations were carried out for three terminal OR logic gates constructed either with a single molecule or with a surface dangling bond circuit interconnected on a Si(100) H surface. The corresponding multi-electrode multi-channel scattering matrix (where the central three terminal junction OR gate is the scattering center) was calculated, taking into account the electronic structure of the supporting Si(100) H surface, the metallic interconnection nano-pads, the surface atomic wires and the molecule. Well interconnected, an optimized OR molecule can only run at a maximum of 10 nA output current intensity for a 0.5 V bias voltage. For the same voltage and with no molecule in the circuit, the output current of an OR surface atomic scale circuit can reach 4 mu A.

引用

页数：14

共 35 条

[1] Adsorption and switching properties of azobenzene derivatives on different noble metal surfaces: Au(111), Cu(111), and Au(100) [J].