Time-resolved photoluminescence of type-II quantum dots and isoelectronic centers in Zn-Se-Te superlattice structures

被引：16

作者：

Cheung, M. C. -K. ^{[1
]}

Cartwright, A. N. ^{[1
]}

Sellers, I. R. ^{[2
]}

McCombe, B. D. ^{[2
]}

Kuskovsky, I. L. ^{[3
]}

机构：

[1] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA

[2] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[3] CUNY Queens Coll, Dept Phys, Flushing, NY 11367 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 03期

关键词：

D O I：

10.1063/1.2835699

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectrally and time-resolved photoluminescence of a ZnTe/ZnSe superlattice reveals a smooth transition of the photoluminescence (PL) lifetime from similar to 100 ns at 2.35 eV to less than a few nanoseconds at 2.8 eV. The significant increase of the lifetime in the low energy region is strong evidence to support the formation of type-II quantum dots (QDs), since in these nanostructures the spatial separation of carriers is increased. The shorter lived emission above 2.5 eV is attributed to excitons bound to Te isoelectronic centers in the ZnSe matrix. The smooth transition of the PL lifetime confirms that clusters of these Te atoms evolve into type-II ZnTe/ZnSe QDs. (c) 2008 American Institute of Physics.

引用

页数：3

共 21 条

[1]

Ando Y, 2002, PHYS STATUS SOLIDI B, V230, P15, DOI 10.1002/1521-3951(200203)230:1<15::AID-PSSB15>3.0.CO

[2]

2-A

[3] Photoluminescence study of MBE grown InGaN with intentional indium segregation [J].

Cheung, MC ;

Namkoong, G ;

Chen, F ;

Furis, M ;

Pudavar, HE ;

Cartwright, AN ;

Doolittle, WA .

PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 7, 2005, 2 (07) :2779-2782

[4]

Fu Q., 1989, PHYS REV B, V39, P3173

[5] Polarized excitons in nanorings and the optical Aharonov-Bohm effect [J].

Govorov, AO ;

Ulloa, SE ;

Karrai, K ;

Warburton, RJ .

PHYSICAL REVIEW B, 2002, 66 (08) :813091-813094

[6] Zn-Se-Te multilayers with submonolayer quantities of Te: Type-II quantum structures and isoelectronic centers [J].

Gu, Y ;

Kuskovsky, IL ;

van der Voort, M ;

Neumark, GF ;

Zhou, X ;

Tamargo, MC .

PHYSICAL REVIEW B, 2005, 71 (04)

[7] Luminescence study on evolution from Te isoelectronic centers to type-II ZnTe quantum dots grown by metalorganic molecular-beam epitaxy [J].

Jo, M. ;

Endo, M. ;

Kumano, H. ;

Suemune, I. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 (SPEC. ISS.) :277-280

[8] Decay dynamics in disordered systems: Application to heavily doped semiconductors [J].

Kuskovsky, I ;

Neumark, GF ;

Bondarev, VN ;

Pikhitsa, PV .

PHYSICAL REVIEW LETTERS, 1998, 80 (11) :2413-2416

[9] Mechanism for increasing dopant incorporation in semiconductors via doped nanostructures [J].

Kuskovsky, Igor L. ;

Gu, Y. ;

Gong, Y. ;

Yan, H. F. ;

Lau, J. ;

Noyan, I. C. ;

Neumark, G. F. ;

Maksimov, O. ;

Zhou, X. ;

Tamargo, M. C. ;

Volkov, V. ;

Zhu, Y. ;

Wang, L. .

PHYSICAL REVIEW B, 2006, 73 (19)

[10] Optical properties of δ-doped ZnSe:Te grown by molecular beam epitaxy:: The role of tellurium -: art. no. 155205 [J].

Kuskovsky, IL ;

Tian, C ;

Neumark, GF ;

Spanier, JE ;

Herman, IP ;

Lin, WC ;

Guo, SP ;

Tamargo, MC .

PHYSICAL REVIEW B, 2001, 63 (15)

← 1 2 3 →