Transparent conducting thin films by co-sputtering of ZnO-ITO targets

被引：10

作者：

Carreras, Paz ^{[1
]}

Antony, Aldrin ^{[1
]}

Roldan, Ruben ^{[1
]}

Nos, Oriol ^{[1
]}

Antonio Frigeri, Paolo ^{[1
]}

Miguel Asensi, Jose ^{[1
]}

Bertomeu, Joan ^{[1
]}

机构：

[1] Univ Barcelona, Grp Energia Solar, E-08028 Barcelona, Spain

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4 | 2010年 / 7卷 / 3-4期

关键词：

ROOM-TEMPERATURE; INDIUM OXIDE; SOLAR-CELLS;

D O I：

10.1002/pssc.200982852

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transparent and conductive Zn-In-Sn-O (ZITO) amorphous thin films have been deposited at room temperature by the rf magnetron co-sputtering of ITO and ZnO targets. Co-sputtering gives the possibility to deposit multicomponent oxide thin films with different compositions by varying the power to one of the targets. In order to make ZITO films with different Zn content, a constant rf power of 50 W was used for the ITO target, where as the rf power to ZnO target was varied from 25 W to 150 W. The as deposited films showed an increase in Zn content ratio from 17 to 67 % as the power to ZnO target was increased from 25 to 150 W. The structural, electrical and optical properties of the as deposited films are reported. The films showed an average transmittance over 80% in the visible wavelength range. The electrical resistivity and optical band gap of the ZITO films were found to depend on the Zn content in the film. The ZITO films deposited at room temperature with lower Zn content ratios showed better optical transmission and electrical properties compared to ITO film. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：953 / 956

页数：4

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