New Y-function based MOSFET parameter extraction method from weak to strong inversion range

被引:26
作者
Henry, J. B. [1 ,2 ]
Rafhay, Q. [1 ]
Cros, A. [2 ]
Ghibaudo, G. [1 ]
机构
[1] Univ Grenoble Alpes, MINATEC, IMEP LAHC, F-38016 Grenoble, France
[2] STMicroelectronics, BP16, F-38921 Crolles, France
关键词
Parameter extraction; MOSFET; Low gate voltage; THRESHOLD VOLTAGE; CHANNEL LENGTH;
D O I
10.1016/j.sse.2016.06.004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new Y-function based MOSFET parameter extraction method is proposed. This method relies on explicit expressions of inversion charge and drain current versus Y-c(=Q(i)root C-gc)-function and Y(=I-d/root g(m))-function, respectively, applicable from weak to strong inversion range. It enables a robust MOSFET parameter extraction even for low gate voltage overdrive, whereas conventional extraction techniques relying on strong inversion approximation fail. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码:84 / 88
页数:5
相关论文
共 14 条
[1]   Improved MOSFET characterization technique for single channel length, scaled transistors [J].
Ferdousi, Fahmida ;
Rios, Rafael ;
Kuhn, Kelin J. .
SOLID-STATE ELECTRONICS, 2015, 104 :44-46
[2]   gm/Id Method for Threshold Voltage Extraction Applicable in Advanced MOSFETs With Nonlinear Behavior Above Threshold [J].
Flandre, Denis ;
Kilchytska, Valeria ;
Rudenko, Tamara .
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (09) :930-932
[3]   A New Technique to Extract the Source/Drain Series Resistance of MOSFETs [J].
Fleury, Dominique ;
Cros, Antoine ;
Bidal, Gregory ;
Rosa, Julien ;
Ghibaudo, Gerard .
IEEE ELECTRON DEVICE LETTERS, 2009, 30 (09) :975-977
[4]   NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS [J].
GHIBAUDO, G .
ELECTRONICS LETTERS, 1988, 24 (09) :543-545
[5]   MEASUREMENT OF THRESHOLD VOLTAGE AND CHANNEL LENGTH OF SUB-MICRON MOSFETS [J].
JAIN, S .
IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1988, 135 (06) :162-164
[6]   Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction [J].
Karatsori, T. A. ;
Theodorou, C. G. ;
Ioannidis, E. G. ;
Haendler, S. ;
Josse, E. ;
Dimitriadis, C. A. ;
Ghibaudo, G. .
SOLID-STATE ELECTRONICS, 2015, 111 :123-128
[7]   Device parameter extraction in the linear region of MOSFET's [J].
Katto, H .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) :408-410
[8]   AN IMPROVED METHOD OF MOSFET MODELING AND PARAMETER EXTRACTION [J].
KRUTSICK, TJ ;
WHITE, MH ;
WONG, HS ;
BOOTH, RVH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1676-1680
[9]   Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET [J].
Lacord, Joris ;
Huguenin, Jean-Luc ;
Skotnicki, Thomas ;
Ghibaudo, Gerard ;
Boeuf, Frederic .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (09) :2534-2538
[10]   A review of recent MOSFET threshold voltage extraction methods [J].
Ortiz-Conde, A ;
Sánchez, FJG ;
Liou, JJ ;
Cerdeira, A ;
Estrada, M ;
Yue, Y .
MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) :583-596