New Y-function based MOSFET parameter extraction method from weak to strong inversion range

被引：26

作者：

Henry, J. B. ^{[1
,2
]}

Rafhay, Q. ^{[1
]}

Cros, A. ^{[2
]}

Ghibaudo, G. ^{[1
]}

机构：

[1] Univ Grenoble Alpes, MINATEC, IMEP LAHC, F-38016 Grenoble, France

[2] STMicroelectronics, BP16, F-38921 Crolles, France

来源：

SOLID-STATE ELECTRONICS | 2016年 / 123卷

关键词：

Parameter extraction; MOSFET; Low gate voltage; THRESHOLD VOLTAGE; CHANNEL LENGTH;

D O I：

10.1016/j.sse.2016.06.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new Y-function based MOSFET parameter extraction method is proposed. This method relies on explicit expressions of inversion charge and drain current versus Y-c(=Q(i)root C-gc)-function and Y(=I-d/root g(m))-function, respectively, applicable from weak to strong inversion range. It enables a robust MOSFET parameter extraction even for low gate voltage overdrive, whereas conventional extraction techniques relying on strong inversion approximation fail. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：84 / 88

页数：5

共 14 条

[1] Improved MOSFET characterization technique for single channel length, scaled transistors [J].

Ferdousi, Fahmida ;

Rios, Rafael ;

Kuhn, Kelin J. .

SOLID-STATE ELECTRONICS, 2015, 104 :44-46

[2] gm/Id Method for Threshold Voltage Extraction Applicable in Advanced MOSFETs With Nonlinear Behavior Above Threshold [J].

Flandre, Denis ;

Kilchytska, Valeria ;

Rudenko, Tamara .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (09) :930-932

[3] A New Technique to Extract the Source/Drain Series Resistance of MOSFETs [J].

Fleury, Dominique ;

Cros, Antoine ;

Bidal, Gregory ;

Rosa, Julien ;

Ghibaudo, Gerard .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (09) :975-977

[4] NEW METHOD FOR THE EXTRACTION OF MOSFET PARAMETERS [J].

GHIBAUDO, G .

ELECTRONICS LETTERS, 1988, 24 (09) :543-545

[5] MEASUREMENT OF THRESHOLD VOLTAGE AND CHANNEL LENGTH OF SUB-MICRON MOSFETS [J].

JAIN, S .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1988, 135 (06) :162-164

[6] Full gate voltage range Lambert-function based methodology for FDSOI MOSFET parameter extraction [J].

Karatsori, T. A. ;

Theodorou, C. G. ;

Ioannidis, E. G. ;

Haendler, S. ;

Josse, E. ;

Dimitriadis, C. A. ;

Ghibaudo, G. .

SOLID-STATE ELECTRONICS, 2015, 111 :123-128

[7] Device parameter extraction in the linear region of MOSFET's [J].

Katto, H .

IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) :408-410

[8] AN IMPROVED METHOD OF MOSFET MODELING AND PARAMETER EXTRACTION [J].

KRUTSICK, TJ ;

WHITE, MH ;

WONG, HS ;

BOOTH, RVH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1676-1680

[9] Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFET [J].

Lacord, Joris ;

Huguenin, Jean-Luc ;

Skotnicki, Thomas ;

Ghibaudo, Gerard ;

Boeuf, Frederic .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (09) :2534-2538

[10] A review of recent MOSFET threshold voltage extraction methods [J].

Ortiz-Conde, A ;

Sánchez, FJG ;

Liou, JJ ;

Cerdeira, A ;

Estrada, M ;

Yue, Y .

MICROELECTRONICS RELIABILITY, 2002, 42 (4-5) :583-596

← 1 2 →