Nanocrystalline Graphite Growth on Sapphire by Carbon Molecular Beam Epitaxy

被引：99

作者：

Jerng, S. K. ^{[1
,2
]}

Yu, D. S. ^{[1
,2
]}

Kim, Y. S. ^{[1
,2
]}

Ryou, Junga ^{[1
,2
]}

Hong, Suklyun ^{[1
,2
]}

Kim, C. ^{[3
]}

Yoon, S. ^{[3
]}

Efetov, D. K. ^{[4
]}

Kim, P. ^{[4
]}

Chun, S. H. ^{[1
,2
]}

机构：

[1] Sejong Univ, Dept Phys, Seoul 143747, South Korea

[2] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea

[3] Ewha Womans Univ, Dept Phys, Seoul 151747, South Korea

[4] Columbia Univ, Dept Phys, New York, NY 10027 USA

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2011年 / 115卷 / 11期

关键词：

TOTAL-ENERGY CALCULATIONS; RAMAN-SCATTERING; GRAPHENE; TRANSISTORS;

D O I：

10.1021/jp110650d

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report the fabrication of nanocrystalline graphite films on sapphire substrates of various cutting directions by using solid carbon source molecular beam epitaxy. Raman spectra show a systematic change from amorphous carbon to nanocrystalline graphite with a cluster diameter of several nanometers, depending on the growth temperature. The symmetry of the substrate seems to have little effect on the film quality. Simulations suggest that the strong bonding between carbon and oxygen may lead to orientational disorders. Transport measurements show a Dirac-like peak and a carrier type change by the gate voltage.

引用

页码：4491 / 4494

页数：4

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