Grain boundary migration in nanocrystalline Ni under constant shear strains and its mechanism

被引：9
|
作者：
Yang, Xinhua [1 ,2 ]
Li, Jie [1 ]
Wang, Peng [3 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Civil Engn & Mech, Wuhan 430074, Peoples R China
[2] Hubei Key Lab Engn Struct Anal & Safety Assessmen, 1037 Luoyu Rd, Wuhan 430074, Peoples R China
[3] Huazhong Agr Univ, Coll Engn, Wuhan 430070, Peoples R China
来源：
COMPUTATIONAL MATERIALS SCIENCE | 2020年 / 176卷
基金：
中国国家自然科学基金;
关键词：
Nanocrystalline Ni; Grain boundary migration; Stress redistribution; Molecular dynamics; STACKING-FAULT TETRAHEDRON; MOLECULAR-DYNAMICS SIMULATIONS; STRESS-RELAXATION; MOTION; DISLOCATION; TEMPERATURE; BEHAVIOR; CREEP; DEFORMATION; INDENTATION;
D O I：
10.1016/j.commatsci.2020.109530
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The grain boundary (GB) migration behavior of nanocrystalline Ni during shear dwelling was simulated using the molecular dynamics method. It was found that further GB migration could take place and be completed within a very short period of time when the external shear load is kept unchanged. The atomic shear stress redistribution was demonstrated to be the driving force. Both the dwelling strain and temperature have considerable complicated influences on the further GB migration. The local atomic shear stress difference around the GB was proposed to characterize the unevenness of atomic shear stress. A threshold condition was given in terms of the local atomic shear stress difference, namely only when it is larger than its threshold value would the further GB migration occur. The threshold value was quantitatively related to the temperature. The effects of dwelling strain and temperature on the further GB migration can be well explained.
引用
收藏
页数：9
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