One-step phase transition and thermal stability improvement of Ge2Sb2Te5 films by erbium-doping

被引：4
作者：
Gu, Ting [1 ,2 ]
Wang, Jiaxing [1 ,2 ]
Liu, Huachi [1 ,2 ]
Wang, Zhenglai [1 ,2 ]
Luo, Yang [1 ,2 ]
Liu, Peng [1 ,2 ]
Zhong, Juechen [1 ,2 ]
Wang, Guoxiang [1 ,2 ]
机构：
[1] Ningbo Univ, Adv Technol Res Inst, Lab Infrared Mat & Devices, Ningbo 315211, Zhejiang, Peoples R China
[2] Key Lab Photoelect Detect Mat & Devices Zhejiang, Ningbo 315211, Zhejiang, Peoples R China
来源：
VACUUM | 2017年 / 145卷
基金：
中国国家自然科学基金;
关键词：
Thin films; Crystallization; X-ray diffraction; Thermal stability; RAMAN-SCATTERING; DOPED GE2SB2TE5; CHANGE MEMORY; STORAGE;
D O I：
10.1016/j.vacuum.2017.09.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The crystallization behavior of Er-doped Ge2Sb2Te5 phase-change materials is investigated systemically for phase change memory application. It is observed that Er dopants can serve as a center for suppression of face-centered-cubic to hexagonal phase transition of Ge2Sb2Te5 films, leading to a one-step crystallization process. The crystallization temperature, 10-year data retention ability and crystalline resistance of Ge2Sb2Te5 films can be significantly increased. Raman spectra suggest that GeTe component is mainly responsible for the phase transition in Er-doped Ge2Sb2Te5 films. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码：258 / 261
页数：4
相关论文
共 12 条
[1]   Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition [J].
Andrikopoulos, KS ;
Yannopoulos, SN ;
Voyiatzis, GA ;
Kolobov, AV ;
Ribes, M ;
Tominaga, J .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (03) :965-979
[2]   Confined Crystals of the Smallest Phase-Change Material [J].
Giusca, Cristina E. ;
Stolojan, Vlad ;
Sloan, Jeremy ;
Boerrnert, Felix ;
Shiozawa, Hidetsugu ;
Sader, Kasim ;
Ruemmeli, Mark H. ;
Buechner, Bernd ;
Silva, S. Ravi P. .
NANO LETTERS, 2013, 13 (09) :4020-4027
[3]   Ultrafast phase change and long durability of BN-incorporated GeSbTe [J].
Jang, Moon Hyung ;
Park, Seung Jong ;
Ahn, Min ;
Jeong, Kwang Sik ;
Park, Sung Jin ;
Cho, Mann-Ho ;
Song, Jae Yong ;
Jeong, Hongsik .
JOURNAL OF MATERIALS CHEMISTRY C, 2015, 3 (08) :1707-1715
[4]   Phase-change optical recording: Past, present, future [J].
Kolobov, A. N. ;
Fons, P. ;
Tominaga, J. .
THIN SOLID FILMS, 2007, 515 (19) :7534-7537
[5]   Enhanced threshold voltage of Zn-doped Ge2Sb2Te5 phase-change memory deposited by electron-beam evaporation [J].
Li, Rui ;
Jiang, Yifan ;
Xu, Ling ;
Ma, Zhongyuan ;
Yang, Fei ;
Xu, Jun ;
Su, Weining .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2013, 210 (12) :2650-2655
[6]   Breaking the Speed Limits of Phase-Change Memory [J].
Loke, D. ;
Lee, T. H. ;
Wang, W. J. ;
Shi, L. P. ;
Zhao, R. ;
Yeo, Y. C. ;
Chong, T. C. ;
Elliott, S. R. .
SCIENCE, 2012, 336 (6088) :1566-1569
[7]   Ge-Sb-Te thin films deposited by pulsed laser: An ellipsometry and Raman scattering spectroscopy study [J].
Nemec, P. ;
Moreac, A. ;
Nazabal, V. ;
Pavlista, M. ;
Prikryl, J. ;
Frumar, M. .
JOURNAL OF APPLIED PHYSICS, 2009, 106 (10)
[8]   STUDY ON LOCAL-STRUCTURE IN AMORPHOUS SB-S FILMS BY RAMAN-SCATTERING [J].
WATANABE, I ;
NOGUCHI, S ;
SHIMIZU, T .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 58 (01) :35-40
[9]   Phase change materials: From material science to novel storage devices [J].
Wuttig, M. ;
Steimer, C. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 87 (03) :411-417
[10]   Phase-change materials for rewriteable data storage [J].
Wuttig, Matthias ;
Yamada, Noboru .
NATURE MATERIALS, 2007, 6 (11) :824-832
12