A Multichannel High-Frequency Current Link Based Isolated Auxiliary Power Supply for Medium-Voltage Applications

被引:31
作者
Yan, Ning [1 ]
Dong, Dong [1 ]
Burgos, Rolando [1 ]
机构
[1] Virginia Tech, Bradley Dept Elect & Comp Engn, Ctr Power Elect Syst, Blacksburg, VA 24061 USA
关键词
Insulation; Power transformer insulation; Wires; Inductance; Current transformers; Switches; Impedance; Common-mode (CM) coupling capacitance; current transformer; insulation; LCCL-LC topology; soft-switching; CONVERTER; PROPULSION;
D O I
10.1109/TPEL.2021.3102055
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The auxiliary power supply (APS) is one of the critical components inside medium-voltage (MV) power converters. Besides high insulation capability and small footprint, low common-mode (CM) coupling capacitance and multichannel output are the desired features of APS in the emerging silicon-carbide-based MV converters due to their fast switching speed. This article presents the design and optimization procedure of a high-density isolated APS using an LCCL-LC resonant topology with an operating frequency of 1 MHz. The proposed design procedure attains consistent soft-switching operation under a random number of output channels. The galvanic isolation is realized by a current-fed single-turn 1 MHz transformer that can achieve a breakdown voltage of over 20 kV while maintaining a small size. Design optimization on the insulation system of the current transformer is proposed to obtain both high partial-discharge inception voltage (PDIV) and low coupling capacitance. Finally, two versions of APSs are developed, using air and silicone as dielectric materials, which can reach PDIV of over 5 and 16 kV, respectively. The corresponding coupling capacitances are 1.86 pF and 3.6 pF. Both designs can provide a maximum power of 20 W on the receiving side, and 120 W on the sending side.
引用
收藏
页码:674 / 686
页数:13
相关论文
共 40 条
  • [11] Herbst J. D., 2011, Proceedings 2011 4th IEEE Electric Ship Technologies Symposium (ESTS 2011), P66, DOI 10.1109/ESTS.2011.5770843
  • [12] High-Density Current-Transformer-Based Gate-Drive Power Supply With Reinforced Isolation for 10-kV SiC MOSFET Modules
    Hu, Jiewen
    Wang, Jun
    Burgos, Rolando
    Wen, Bo
    Boroyevich, Dushan
    [J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (03) : 2217 - 2226
  • [13] Kim J., 2017, 2017 IEEE International Magnetics Conference (INTERMAG), DOI 10.1109/INTMAG.2017.8007821
  • [14] Kusaka K, 2014, INT CONF POW ELECTR, P191, DOI 10.1109/IPEC.2014.6869579
  • [15] Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter
    Li Zhang
    Ji, Shiqi
    Gu, Shida
    Huang, Xingxuan
    Palmer, James Everette
    Giewont, William
    Wang, Fei
    Tolbert, Leon M.
    [J]. IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2021, 68 (07) : 5712 - 5724
  • [16] Solid-State Transformer and MV Grid Tie Applications Enabled by 15 kV SiC IGBTs and 10 kV SiC MOSFETs Based Multilevel Converters
    Madhusoodhanan, Sachin
    Tripathi, Awneesh
    Patel, Dhaval
    Mainali, Krishna
    Kadavelugu, Arun
    Hazra, Samir
    Bhattacharya, Subhashish
    Hatua, Kamalesh
    [J]. IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2015, 51 (04) : 3343 - 3360
  • [17] Mainali K, 2016, APPL POWER ELECT CO, P1632, DOI 10.1109/APEC.2016.7468085
  • [18] Metal H, 2020, SOFT FERRITE CORE MA
  • [19] A Survey of Wide Bandgap Power Semiconductor Devices
    Millan, Jose
    Godignon, Philippe
    Perpina, Xavier
    Perez-Tomas, Amador
    Rebollo, Jose
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) : 2155 - 2163
  • [20] Power Cell Design and Assessment Methodology Based on a High-Current 10-kV SiC MOSFET Half-Bridge Module
    Mocevic, Slavko
    Yu, Jianghui
    Xu, Yue
    Stewart, Joshua
    Wang, Jun
    Cvetkovic, Igor
    Dong, Dong
    Burgos, Rolando
    Boroyevich, Dushan
    [J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2021, 9 (04) : 3916 - 3935