ZnxCd1-xTe epitaxial growth by remote plasma enhanced MOCVD method

被引：2
|
作者：
Noda, D [1 ]
Aoki, T [1 ]
Nakanishi, Y [1 ]
Hatanaka, Y [1 ]
机构：
[1] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 432, Japan
来源：
SEMICONDUCTORS FOR ROOM-TEMPERATURE RADIATION DETECTOR APPLICATIONS II | 1997年 / 487卷
关键词：
D O I：
10.1557/PROC-487-45
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
For epitaxial growth of compound ZnxCd1-xTe by metal organic chemical vapor deposition (MOCVD) it is difficult to obtain a high composition ratio x. In this study, we have adopted a remote plasma enhanced (RPE) MOCVD method for the epitaxial growth Cd1-xZnxTe with the composition ratio x in the range of 0 to 1 has been obtained while varying the ratio of dimethylcadmium (DMCd) to diethylzinc (DEZn) from 0 to 20%. The crystallinity of the epitaxial films was about 400 to 700 arcsec FWHM defined by X ray diffraction measurements.
引用
收藏
页码：45 / 49
页数：5
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