机构:
Univ Nantes, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France
CNRS, Reseau Stockage Electrochim Energi RS2E, FR 3459, F-75700 Paris, FranceUniv Nantes, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France
Brousse, Thierry
[1
,2
]
Belanger, Daniel
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机构:
Univ Quebec, Dept Chim, Montreal, PQ H3C 3P8, CanadaUniv Nantes, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France
Belanger, Daniel
[3
]
Long, Jeffrey W.
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US Naval Res Lab, Surface Chem Branch, Washington, DC 20375 USAUniv Nantes, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France
Long, Jeffrey W.
[4
]
机构:
[1] Univ Nantes, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France
[2] CNRS, Reseau Stockage Electrochim Energi RS2E, FR 3459, F-75700 Paris, France
There are an increasing number of studies regarding active electrode materials that undergo faradaic reactions but are used for electrochemical capacitor applications. Unfortunately, some of these materials are described as "pseudocapacitive" materials despite the fact that their electrochemical signature (e.g., cyclic voltarnmogram and charge/discharge curve) is analogous to that of a "battery" material, as commonly observed for Ni(OH)(2) and cobalt oxides in KOH electrolyte. Conversely, true pseudocapacitive electrode materials such as MnO2 display electrochemical behavior typical of that observed for a capacitive carbon electrode. The difference between these two classes of materials will be explained, and we demonstrate why it is inappropriate to describe nickel oxide or hydroxide and cobalt oxide/hydroxide as pseudocapacitive electrode materials. (C) The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commerdial reuse; distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. All rights reserved.