A wide dynamic-range CMOS image sensor using self-reset technique

被引：28
|
作者：
Park, Dongwon [1 ]
Rhee, Jehyuk
Joo, Youngjoong
机构：
[1] Arizona State Univ, Dept Elect Engn, Tempe, AZ 85287 USA
[2] Magnachip Semicond, Lake Oswego, OR 97035 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 10期
关键词：
CMOS image sensors; pixel-level A/D converter (ADC); self-reset technique; wide dynamic range (DR);
D O I：
10.1109/LED.2007.905396
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A wide dynamic-range (DR) pixel-level CMOS image sensor with self-reset technique has been fabricated using a 0.18-mu m six-metal CMOS technology and tested to verify simultaneous increase of both DR and peak signal-to-noise ratio (SNR). It provides a continuous peak SNR enhancement over a strong incident light range. Maximum achievable DR is measured over 71.1 dB, and SNR keeps increasing at 7.3 dB/decade beyond conventional CMOS image sensors.
引用
收藏
页码：890 / 892
页数：3
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