Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

被引:24
作者
Lin, L. [1 ]
Zhen, H. L. [1 ]
Li, N. [1 ]
Lu, W. [1 ]
Weng, Q. C. [2 ]
Xiong, D. Y. [2 ]
Liu, F. Q. [3 ]
机构
[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China
[2] E China Normal Univ, Key Lab Polarized Mat & Devices, Shanghai 200241, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
基金
美国国家科学基金会;
关键词
DETECTORS;
D O I
10.1063/1.3517253
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively. (C) 2010 American Institute of Physics. [doi:10.1063/1.3517253]
引用
收藏
页数:3
相关论文
共 37 条
  • [21] Low frequency noise-dark current correlations in HgCdTe infrared photodetectors
    Zhu, Liqi
    Deng, Zhuo
    Huang, Jian
    Guo, Huijun
    Chen, Lu
    Lin, Chun
    Chen, Baile
    OPTICS EXPRESS, 2020, 28 (16): : 23660 - 23669
  • [22] Design of enhanced broadband optical couplers for long-infrared quantum well infrared photodetectors
    Liu, Huipeng
    Li, Ning
    Zhou, Xiaohao
    JOURNAL OF APPLIED PHYSICS, 2025, 137 (03)
  • [23] Theoretical Investigation on Microcavity Coupler for Terahertz Quantum-Well Infrared Photodetectors
    Guo, Xuguang
    Ren, Yuxiang
    Zhang, Guixue
    Yu, Anqi
    Chen, Xiaoshuang
    Zhu, Yiming
    IEEE ACCESS, 2020, 8 : 176149 - 176157
  • [24] An equivalent circuit model for the long-wavelength quantum well infrared photodetectors
    Li, L.
    Xiong, D. Y.
    Wen, J.
    Weng, Q. C.
    OPTICAL AND QUANTUM ELECTRONICS, 2013, 45 (07) : 649 - 656
  • [25] Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors
    Liu Dong
    Fu Yong-Qi
    Yang Le-Chen
    Zhang Bao-Shun
    Li Hai-Jun
    Fu Kai
    Xiong Min
    CHINESE PHYSICS LETTERS, 2012, 29 (06)
  • [26] Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface
    Mano, Takaaki
    Ohtake, Akihiro
    Kawazu, Takuya
    Miyazaki, Hideki T.
    Sakuma, Yoshiki
    ACS APPLIED MATERIALS & INTERFACES, 2023, 15 (24) : 29636 - 29642
  • [27] Double barrier strained quantum well infrared photodetectors for the 3-5 μm atmospheric window
    Gueriaux, Vincent
    Nedelcu, Alexandru
    Bois, Philippe
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (11)
  • [28] A Comprehensive Model of Electrical Noise in AlGaAs/GaAs Long-wavelength Quantum Well Infrared Photodetectors
    Xiong, Dayuan
    Qiu, Weiyang
    Weng, Qianchun
    Zhu, Shigian
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (12) : 11206 - 11210
  • [29] Coupling of Infrared Active Colloidal Quantum Dots and Amorphous Selenium for Fast and Sensitive Photodetection
    Molnas, Havard
    Mukherjee, Atreyo
    Kannan, Haripriya
    Han, Zhihang
    Ravi, Vikash K.
    Paul, Shlok J.
    Rumaiz, Abdul K.
    Zhao, Wei
    Goldan, Amir H.
    Sahu, Ayaskanta
    ADVANCED FUNCTIONAL MATERIALS, 2024, 34 (32)
  • [30] GeSn-Based Multiple-Quantum-Well Photodetectors for Mid-Infrared Sensing Applications
    Kumar, Harshvardhan
    Pandey, Ankit Kumar
    IEEE TRANSACTIONS ON NANOBIOSCIENCE, 2022, 21 (02) : 175 - 183