Sequential coupling transport for the dark current of quantum dots-in-well infrared photodetectors

被引：25

作者：

Lin, L. ^{[1
]}

Zhen, H. L. ^{[1
]}

Li, N. ^{[1
]}

Lu, W. ^{[1
]}

Weng, Q. C. ^{[2
]}

Xiong, D. Y. ^{[2
]}

Liu, F. Q. ^{[3
]}

机构：

[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

[2] E China Normal Univ, Key Lab Polarized Mat & Devices, Shanghai 200241, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 19期

基金：

美国国家科学基金会;

关键词：

DETECTORS;

D O I：

10.1063/1.3517253

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dark current characteristics and temperature dependence for quantum dot infrared photodetectors have been investigated by comparing the dark current activation energies between two samples with identical structure of the dots-in-well in nanoscale but different microscale n-i-n environments. A sequential coupling transport mechanism for the dark current between the nanoscale and the microscale processes is proposed. The dark current is determined by the additive mode of two activation energies: E-a,E-micro from the built-in potential in the microscale and E-a,E-nano related to the thermally assisted tunneling in nanoscale. The activation energies E-a,E-micro and E-a,E-nano decrease exponentially and linearly with increasing applied electric field, respectively. (C) 2010 American Institute of Physics. [doi:10.1063/1.3517253]

引用

页数：3

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