Sn3O4 single crystal nanobelts grown by carbothermal reduction process

被引：21

作者：

Damaschio, Cleocir Jose ^{[1
]}

Berengue, Olivia M. ^{[2
]}

Stroppa, Daniel G. ^{[3
]}

Simon, Ricardo A. ^{[2
]}

Ramirez, Antonio J. ^{[3
]}

Schreiner, Wido Herwig ^{[4
]}

Chiquito, Adenilson J. ^{[2
]}

Leite, Edson R. ^{[1
]}

机构：

[1] Univ Fed Sao Carlos, Dept Quim, Lab Interdisciplinar Eletroquim & Ceram, BR-13565905 Sao Paulo, Brazil

[2] Univ Fed Sao Carlos, Nano Lab Dept Fis, BR-13565905 Sao Paulo, Brazil

[3] Lab Nacl Luz Sincrotron, BR-13084971 Sao Paulo, Brazil

[4] Univ Fed Parana, Lab Superficies & Interfaces, BR-81531990 Curitiba, Parana, Brazil

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 20期

基金：

巴西圣保罗研究基金会;

关键词：

Dendrites; Nanostructures; Growth from vapor; Oxides; Semiconducting materials; X-RAY-DIFFRACTION; TIN OXIDE; SNO; DISPROPORTIONATION; OXIDATION; SURFACE; FILMS;

D O I：

10.1016/j.jcrysgro.2010.07.022

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This article reports on the growth of single crystal Sn3O4 nanobelts and SnO by a carbothermal reduction process in two different regions of a furnace tube. Even though intermediate tin oxide compounds (Sn3O4) have been observed experimentally, the study of structures based on them is a challenging task. Characterization data allowed us to propose that Sn3O4 nanobelts grew by vapor-solid mechanism while SnO grew by self-catalyst vapor-liquid-solid mechanism. Electrical measurements of a single Sn3O4 nanobelt were performed at different temperatures, revealing undoped semiconductor characteristics. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：2881 / 2886

页数：6

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