Ammonothermal crystal growth of gallium nitride - A brief discussion of critical issues

被引：13
作者：
Ehrentraut, Dirk [1 ]
Fukuda, Tsuguo [1 ]
机构：
[1] Tohoku Univ, World Premier Int Res Ctr, Adv Inst Mat Res WPI AIMR, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 18期
关键词：
Solubility; Ammonothermal crystal growth; Gallium nitride; BULK GAN CRYSTALS;
D O I：
10.1016/j.jcrysgro.2010.04.004
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The acidic ammonothermal technique is used to develop a technology for production of free-standing gallium nitride (GaN) crystals to match the demand driven by the device technology for the wide-band-gap semiconductor group-Ill element nitrides. Here we report on advances toward a deeper understanding of parameters that govern mass transport and seeded crystallization of GaN under the conditions of acidic ammonothermal crystal growth with the ultimate goal to improve the process control. Comparison with the basic ammonothermal environment has been made. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2514 / 2518
页数：5
相关论文
共 22 条
[1]   Excellent crystallinity of truly bulk ammonothermal GaN [J].
Dwilinski, R. ;
Doradzinski, R. ;
Garczynski, J. ;
Sierzputowski, L. P. ;
Puchalski, A. ;
Kanbara, Y. ;
Yagi, K. ;
Minakuchi, H. ;
Hayashi, H. .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (17) :3911-3916
[2]   Bulk ammonothermal GaN [J].
Dwilinski, R. ;
Doradzinski, R. ;
Garczynski, J. ;
Sierzputowski, L. P. ;
Puchalski, A. ;
Kanbara, Y. ;
Yagi, K. ;
Minakuchi, H. ;
Hayashi, H. .
JOURNAL OF CRYSTAL GROWTH, 2009, 311 (10) :3015-3018
[3]  
DWILINSKI R, 2009, 6 INT WORKSH BULK NI
[4]  
EHRENTRAUT D, UNPUB
[5]   Reviewing recent developments in the acid ammonothermal crystal growth of gallium nitride [J].
Ehrentraut, Dirk ;
Kagamitani, Yuji ;
Fukuda, Tsuguo ;
Orito, Fumio ;
Kawabata, Shinichiro ;
Katano, Kizuku ;
Terada, Shigeru .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (17) :3902-3906
[6]   Physico-chemical features of the acid ammonothermal growth of GaN [J].
Ehrentraut, Dirk ;
Kagamitani, Yuji ;
Yokoyama, Chiaki ;
Fukuda, Tsuguo .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (05) :891-895
[7]   Temperature effect of ammonium halogenides as mineralizers on the phase stability of gallium nitride synthesized under acidic ammonothermal conditions [J].
Ehrentraut, Dirk ;
Hoshino, Naruhiro ;
Kagamitani, Yuji ;
Yoshikawa, Akira ;
Fukuda, Tsuguo ;
Itoh, Hirohisa ;
Kawabata, Shinichiro .
JOURNAL OF MATERIALS CHEMISTRY, 2007, 17 (09) :886-893
[8]   Solvothermal growth of ZnO [J].
Ehrentraut, Dirk ;
Sato, Hideto ;
Kagamitani, Yuji ;
Sato, Hiroki ;
Yoshikawa, Akira ;
Fukuda, Tsuguo .
PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2006, 52 (04) :280-335
[9]   The Ammonothermal Crystal Growth of Gallium Nitride-A Technique on the Up Rise [J].
Ehrentraut, Dirk ;
Fukuda, Tsuguo .
PROCEEDINGS OF THE IEEE, 2010, 98 (07) :1316-1323
[10]   Development of Bulk GaN Crystals and Nonpolar/Semipolar Substrates by HVPE [J].
Fujito, Kenji ;
Kubo, Shuichi ;
Fujimura, Isao .
MRS BULLETIN, 2009, 34 (05) :313-317
123