Scanning tunneling microscopy/spectroscopy of dangling-bond wires fabricated on the Si(100)-2x1-H surface

被引：20

作者：

Hitosugi, T

Hashizume, T

Heike, S

Kajiyama, H

Wada, Y

Watanabe, S

Hasegawa, T

Kitazawa, K

机构：

[1] Univ Tokyo, Grad Sch Engn, Dept Superconduct, Bunkyo Ku, Tokyo 113, Japan

[2] Hitachi Ltd, Adv Res Lab, Hatoyama, Saitama 35003, Japan

[3] Univ Tokyo, Grad Sch Engn, Dept Mat Sci, Bunkyo Ku, Tokyo 113, Japan

[4] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 226, Japan

来源：

APPLIED SURFACE SCIENCE | 1998年 / 130卷

关键词：

scanning tunneling microscopy; scanning tunneling spectroscopy; silicon; dangling bond; atomic wire;

D O I：

10.1016/S0169-4332(98)00081-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We present a scanning tunneling microscopy/spectroscopy (STM/STS) study of atomic-scale dangling-bond (DB) wires on a hydrogen-terminated Si(100)-2 x 1-H surface. In the case of DB wires made of paired DBs, the STS shows semiconductive electronic states with a band gap of approximately 0.5 eV. The DB wires made of both single and paired DBs show a finite density of states at Fermi energy and do not show semiconductive band gaps. We have succeeded in making an atomic-scale wire that has a finite density of states at Fermi energy on a semiconductive surface. The results are in good agreement with a recent first-principles theoretical calculations. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：340 / 345

页数：6

共 18 条

[1] SI (100) SURFACE .3. SURFACE RECONSTRUCTION [J].