Band lineup of a SnS2/SnSe2/SnS2 semiconductor quantum well structure prepared by van der Waals epitaxy

被引：45

作者：

Schlaf, R ^{[1
]}

Pettenkofer, C ^{[1
]}

Jaegermann, W ^{[1
]}

机构：

[1] Hahn Meitner Inst Kernforsch Berlin GmbH, Bereich CG, D-14109 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 09期

关键词：

D O I：

10.1063/1.370160

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quantum well composed of layered semiconductors and SnSe2 (E-g = 1.03 eV) and SnS2 (E-g = 2.18 eV) was grown in several steps by van der Waals epitaxy. After each growth step the electronic structure was characterized by ultraviolet and x-ray photoemission spectroscopy. From these measurements, bandbending and the valence-band offset were determined on both sides of the quantum well. The results show that both wells are of the same magnitude, hence indicating commutativity of the band offset. Small interface dipoles (0.11-0.19 eV) were detected at the interfaces, which could be identified as quantum dipoles. (C) 1999 American Institute of Physics. [S0021-8979(99)03409-X].

引用

页码：6550 / 6556

页数：7

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