Localization of excited carriers in Zn1-xMgxSe and Zn1-x-yMgxCdySe solid solutions

被引：3

作者：

Firszt, F. ^{[1
]}

Legowski, S. ^{[1
]}

Meczynska, H. ^{[1
]}

Huang, C. T. ^{[2
]}

Hsu, H. P. ^{[2
]}

Huang, Y. S. ^{[2
]}

机构：

[1] Nicholas Copernicus Univ, Inst Phys, PL-87100 Torun, Poland

[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 01期

关键词：

II-VI semiconductors; mixed crystals; luminescence; exciton localization;

D O I：

10.3938/jkps.53.13

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper deals with a luminescence study of Zn1-xMgxSe and Zn1--x-yMgxCdySe mixed crystals grown from the melt by using the high-pressure Bridgman method. Photoluminescence spectra at low temperatures of all investigated samples consist of an exciton line, luminescence due to radiative recombination of shallow donor-accept or pairs and deep levels emission bands. The excitonic emission appears in the temperature range from 30 K to room temperature in all investigated crystals. The anomalous "S-shape" temperature dependence of the exciton PL peak is observed for Zn1-xMgxSe and Zn1-x-yMgxCdySe crystals with high Mg contents. The results of detailed investigations of temperature the dependence of the luminescence can be explained by localization of excited carriers caused by statistical fluctuations of the local composition. The high efficiency of near band-edge photoluminescence at low temperatures is interpreted as being due to radiative recombination of localized excitons.

引用

页码：13 / 18

页数：6

共 25 条

[1] FLUORESCENCE LINE NARROWING, LOCALIZED EXCITON-STATES, AND SPECTRAL DIFFUSION IN THE MIXED SEMICONDUCTOR CDSXSE1-X [J].

COHEN, E ;

STURGE, MD .

PHYSICAL REVIEW B, 1982, 25 (06) :3828-3840

[2] Localization of excitons in Zn1-xMgxSe and Cd1-xMgxSe crystals [J].

Firszt, F ;

Meczynska, H ;

Legowski, S ;

Paszkowicz, W .

JOURNAL OF ALLOYS AND COMPOUNDS, 2004, 371 (1-2) :107-110

[3] COMPOSITION DEPENDENCE OF THE UNIT-CELL DIMENSIONS AND THE ENERGY-GAP IN ZN1-XMGXSE CRYSTALS [J].

FIRSZT, F ;

MECZYNSKA, H ;

SEKULSKA, B ;

SZATKOWSKI, J ;

PASZKOWICZ, W ;

KACHNIARZ, J .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (02) :197-200

[4] Growth and characterisation of Cd1-xMgxSe mixed crystals [J].

Firszt, F ;

Legowski, S ;

Meczynska, H ;

Szatkowski, J ;

Paszkowicz, W ;

Marczak, M .

JOURNAL OF CRYSTAL GROWTH, 1998, 184 :1053-1056

[5]

FIRSZT F, 1995, 22 INT C PHYS SEM P, V1, P273

[6]

FIRSZT F, 1997, SEMICOND SCI TECH, V15, P272

[7] Quaternary Znx′Cdy′Mg1-x′-y'Se/ZnxCdyMg1-x-ySe quantum wells grown on InP substrates for blue emission [J].

Guo, SP ;

Zeng, L ;

Tamargo, MC .

APPLIED PHYSICS LETTERS, 2001, 78 (01) :1-3

[8] Optical and electrical properties of Al-rich AlGaN alloys [J].

Li, J ;

Nam, KB ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2001, 79 (20) :3245-3247

[9] SYSTEMATIC PHOTOLUMINESCENCE STUDY OF CDXHG1-XTE ALLOYS IN A WIDE COMPOSITION RANGE [J].

LUSSON, A ;

FUCHS, F ;

MARFAING, Y .

JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :673-677

[10] Luminescent properties of BexCd1-xSe thin films [J].

Maksimov, O ;

Muñoz, M ;

Tamargo, MC .

MICROELECTRONICS JOURNAL, 2006, 37 (01) :19-21

← 1 2 3 →