Enhanced Transverse Seebeck Coefficients in 2D/2D PtSe2/MoS2 Heterostructures Using Wet-Transfer Stacking

被引：4
作者：
Kang, Min-Sung [1 ,2 ]
Lee, Won-Yong [3 ]
Yoon, Young-Gui [1 ,2 ]
Choi, Jae Won [1 ,2 ]
Kim, Gil-Sung [1 ,2 ]
Kim, Si-Hoo [1 ,2 ]
Park, No-Won [1 ,2 ]
Lee, Sang-Kwon [1 ,2 ]
机构：
[1] Chung Ang Univ, Dept Phys, Seoul 06974, South Korea
[2] Chung Ang Univ, Ctr Berry Curvature Based New Phenomena, Seoul 06974, South Korea
[3] Uppsala Univ, Dept Elect Engn, Div Solid State Elect, S-75103 Uppsala, Sweden
来源：
ACS APPLIED MATERIALS & INTERFACES | 2022年 / 14卷 / 46期
基金：
新加坡国家研究基金会;
关键词：
two-dimensional transition-metal dichalcogenide; transverse Seebeck coefficients; density of states; heterojunction structure; platinum diselenide; molybdenum disulfide; heat current; MOS2 FOLLOWING TREATMENT; FILMS;
D O I：
10.1021/acsami.2c14065
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
It is very challenging to estimate thermoelectric (TE) properties when applying millimeter-scale two-dimensional (2D) transition metal dichalcogenide (TMDC) materials to TE device applications, particularly their Seebeck coefficient due to their high intrinsic electrical resistance. This paper proposes an innovative approach to measure large transverse (i.e., in-plane) Seebeck coefficients for 2D TMDC materials by placing a low resistance (LR) semimetallic PtSe2 film on high-resistance (HR) semiconducting MoS2 (>10 M omega), whose internal resistance is too high to measure the Seebeck coefficient, forming a heterojunction structure using wet-transfer stacking. The vertically stacked LRPtSe2 (3 nm)/HR-MoS2 (12 nm) heterostructure film exhibits a high Seebeck coefficient > 190 mu V/K up to 5 K temperature difference. This unusual behavior can be explained by an additional Seebeck effect induced at the interface between the LR-2D/HR2D heterostructure. The proposed stacked LR-PtSe2/HR-MoS2 heterostructure film offers promising phenomena 2D/2D materials that enable innovative TE device applications.
引用
收藏
页码：51881 / 51888
页数：8
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