Study of in-plane orientation of epitaxial AlN films grown on (111) SrTiO3

被引：19

作者：

Yao, Z. Q. ^{[1
,2
]}

Fan, X. ^{[1
,2
]}

He, B. ^{[1
,2
]}

Zhang, W. J. ^{[1
,2
]}

Bello, I. ^{[1
,2
]}

Lee, S. T. ^{[1
,2
]}

Meng, X. M. ^{[3
]}

机构：

[1] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China

[2] City Univ Hong Kong, Dept Phys & Mat Sci, Hong Kong, Hong Kong, Peoples R China

[3] Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

关键词：

D O I：

10.1063/1.2948854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Substrate temperature and chemical etching were demonstrated to be dominant factors in determining the in-plane orientation of AlN films grown epitaxially on SrTiO3 (STO) (111) substrates by magnetron sputtering. Single-domain epitaxial AlN films were grown at moderate temperatures of 270-370 degrees C with a sharp interface and orientation relationship of [2 (1) over bar(1) over bar0](AlN)parallel to[0 (1) over bar1](STO) and (0002)(AlN)parallel to(111)(STO). At temperature above 470 degrees C, an additional 30 degrees in-plane-rotated AlN domain appeared, and increased in percentage with increasing temperature. A model based on the reconstruction of STO (111) surfaces from (1x1) to (root 3x root 3)R30 degrees was proposed to account for the formation of this new domain. (C) 2008 American Institute of Physics.

引用

页数：3

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