Time-resolved photoluminescence studies of GaN epilayers grown by gas source molecular beam epitaxy on an AlN buffer layer on (111) Si

被引：38

作者：

Godlewski, M

Bergman, JP

Monemar, B

Rossner, U

Barski, A

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

[2] CEA GRENOBLE,DEPT RECH FONDAMENTALE MAT CONDENSEE SP2M,F-38054 GRENOBLE 9,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 14期

关键词：

D O I：

10.1063/1.116889

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical properties of GaN epilayers grown by gas source molecular beam epitaxy on a (111) Si substrate with an AlN buffer layer are described. The mechanism of energy transfer between different excitonic emissions is proposed based on the results of time-resolved photoluminescence (PL) and PL kinetics measurements. It is suggested that tunneling of excitons between bound and free excitons is responsible for the observed PL decay transients and their temperature dependence. (C) 1996 American Institute of Physics.

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页码：2089 / 2091

页数：3

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