Single-Mode Emission From Ge Quantum Dots in Photonic Crystal Nanobeam Cavity

被引：10

作者：

Zhang, Yong ^{[1
]}

Zeng, Cheng ^{[1
]}

Zhang, He ^{[1
]}

Li, Danping ^{[1
]}

Gao, Ge ^{[1
]}

Huang, Qingzhong ^{[1
]}

Wang, Yi ^{[1
]}

Yu, Jinzhong ^{[2
]}

Xia, Jinsong ^{[1
]}

机构：

[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2015年 / 27卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Silicon; photonic crystals; quantum dots; photoluminescence; DOPED SILICON-NITRIDE; LIGHT-EMITTING-DIODES; QUALITY-FACTOR; ROOM-TEMPERATURE; RING-RESONATOR; NANOCAVITIES; ELECTROLUMINESCENCE; MICROCAVITY; DESIGN;

D O I：

10.1109/LPT.2015.2405555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A freestanding one-dimensional photonic crystal nanobeam cavity embedded with Ge self-assembled quantum dots is designed and fabricated on a silicon-on-insulator substrate. Only one photoluminescence peak is observed in the wavelength range of 1000 to 1600 nm at room temperature. The emission peak dominates the photoluminescence spectrum over an almost flat and weak background emission, which indicates single-mode emission is realized in the proposed light emitter.

引用

页码：1026 / 1029

页数：4

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