Anomalous field effect and slow relaxation in an AlGaN/GaN quantum well

被引：1

作者：

Tu, Huayao ^{[1
,4
]}

Gao, Kuanghong ^{[2
]}

Zhang, Songran ^{[1
,3
]}

Yu, Guolin ^{[1
]}

Sun, Yan ^{[1
]}

Kang, Tingting ^{[1
]}

Chen, Xin ^{[1
]}

Dai, Ning ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Tianjin Univ, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Dept Phys, Tianjin 300072, Peoples R China

[3] Univ Shanghai Sci & Technol, Sch Mat Sci & Engn, Shanghai 200093, Peoples R China

[4] Univ Chinese Acad Sci, Beijing 100049, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2020年 / 59卷 / 05期

基金：

国家重点研发计划;

关键词：

Slow relaxation; Anomalous field effect; AlGaN; GaN quantum well; PERSISTENT PHOTOCONDUCTIVITY; ELECTRON-MOBILITY; CURRENT COLLAPSE; SEMICONDUCTOR; TRANSPORT; DISORDER; BEHAVIOR; GAN;

D O I：

10.35848/1347-4065/ab8841

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here we report the observation of the anomalous field effect, manifested as apparent electric hysteresis and decreasing resistance in the negative gate bias region in an Al0.087Ga0.913N/GaN heterostructure quantum well at low temperature. Together with this, slow relaxation of resistivity was observed. Magnetotransport measurements were carried out to determine the origin of such phenomena. The results show that the origin of electric hysteresis and slow relaxation is the capture and release of electrons by traps located in regions of the device structure outside of the conducting 2DEG channel. Besides, the existence of slow dynamics at only low temperature indicates that the traps involved should be shallow impurities. As for the anomalous reduced resistance when applying negative gate bias, it should come from the increase of mobility, which is due to the dominant role of interface roughness scattering at low temperature.

引用

页数：4

共 39 条

[1] ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].