Mechanisms of gallium arsenide reactive ion etching in chlorine-argon

被引：0

作者：

Moshkalyov, S

Machida, M

Lebedev, S

Campos, D

机构：

来源：

ICPP 96 CONTRIBUTED PAPERS - PROCEEDINGS OF THE 1996 INTERNATIONAL CONFERENCE ON PLASMA PHYSICS, VOLS 1 AND 2 | 1997年

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D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The experimental results on GaAs RIE in Cl-2/Ar are considered within the framework of the ion-neutral synergy model. It has been shown, that the model gives a good agreement with the etch rate data obtained for low Cl-2 partial pressure, but fails at the increased chlorine percentage. A possible contribution of vibrationally excited Cl-2 molecules to GaAs etch rate has been considered.

引用

页码：1838 / 1841

页数：4