High-K substrate effect on thermal properties of 2D InSe few layer

被引:14
作者
Botcha, V. Divakar [1 ,2 ]
Zhang, Mengdie [1 ]
Li, Kuilong [1 ,2 ]
Gu, Hong [1 ,2 ]
Huang, Zhonghui [1 ]
Cai, Jianhui [3 ]
Lu, Youming [1 ]
Yu, Wenjie [3 ]
Liu, Xinke [1 ]
机构
[1] Shenzhen Univ, Coll Mat Sci & Engn, Guangdong Res Ctr Interfacial Engn Funct Mat, 3688 Nanhai Ave, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, Key Lab Optoelect Devices & Syst, Minist Educ & Guangdong Prov, Coll Optoelect Engn, 3688 Nanhai Ave, Shenzhen 518060, Peoples R China
[3] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, 865 Chang Ning Rd, Shanghai 200050, Peoples R China
基金
中国国家自然科学基金;
关键词
Indium selenide; SiO2 passivation layer; High-k substrate; Thermal stability; Thermal conductivity; Raman spectroscopy; FIELD-EFFECT TRANSISTORS; TEMPERATURE-DEPENDENT RAMAN; BLACK PHOSPHORUS; MOS2; TRANSISTORS; MONOLAYER MOS2; GRAPHENE; CONDUCTIVITY; PERFORMANCE; SCATTERING; NANOSHEETS;
D O I
10.1016/j.jallcom.2017.11.058
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Two-dimensional thin layers of indium selenide (InSe) have attracted much attention due to their potential applications in optoelectronics as highly responsive photo-detectors and field-effect transistors. In the present work, we explore thermal properties of InSe thin layers on a high-k substrate with a thin SiO2 passivation layer using temperature and power dependent Raman spectroscopy. The first order temperature coefficients for in-plane (E-2g(1)) and out-of-plane (A(1g)(2)) modes of InSe few-layers on a Al2O3 substrate were found to be -0.00507 and -0.00310 cm(-1)/K, respectively, which are much smaller than the corresponding values -0.00612 and -0.00528 cm(-1)/K of similarly prepared sample on SiO2 substrate. The difference in temperature coefficients is attributed to compressive strain introduced by the Al2O3. Further, the average thermal conductivity of a 4 nm thin InSe layer on the Al2O3 substrate at room temperature was found to be similar to 53.4 W/m-K, which is significantly larger than those of InSe layers prepared on SiO2 substrate (similar to 28.7 W/m-K). The existed interface charges between the Al2O3 and InSe layers cause the observed improvement of thermal conductivity by electron-phonon interactions. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:594 / 599
页数:6
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