Lasing emission of InGaAs quantum dot microdisk diodes

被引：19
|
作者：
Zhang, LD [1 ]
Hu, E [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 01期
基金：
美国国家科学基金会;
关键词：
epitaxial growth; laser modes; laser resonators; quantum dots (QDs); semiconductor device fabrication; semiconductor lasers;
D O I：
10.1109/LPT.2003.818920
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved three-arm airbridge contacted microdisk diode structure is presented. Continuous-wave lasing from InGaAs quantum dot (QD) in a similar to4-mum-diameter microdisks is reported with the threshold current similar to40 muA at T = 5 K. With the increase of injection current, the QD's emission blueshifts due to the band-filling effect, while the laser mode peak redshifts by thermal effect. When the QD's gain spectra shift out of alignment with the lasing mode, the next available whispering gallery mode starts lasing from QD wetting layer. The thermal heating effect is discussed by investigating the modes redshift with respect to injection current.
引用
收藏
页码：6 / 8
页数：3
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