Direct Imaging of Two-State Dynamics on the Amorphous Silicon Surface

被引：22

作者：

Ashtekar, S. ^{[1
,2
]}

Scott, G. ^{[1
,2
]}

Lyding, J. ^{[1
,3
]}

Gruebele, M. ^{[1
,2
,4
]}

机构：

[1] Univ Illinois, Beckman Inst Adv Sci & Technol, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Chem, Urbana, IL 61801 USA

[3] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

[4] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

来源：

PHYSICAL REVIEW LETTERS | 2011年 / 106卷 / 23期

关键词：

CHEMICAL-VAPOR-DEPOSITION; TRANSITION; GLASSES; POINT;

D O I：

10.1103/PhysRevLett.106.235501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Amorphous silicon is an important material, amidst a debate whether or not it is a glass. We produce amorphous Si surfaces by ion bombardment and vapor growth, and image discrete Si clusters which hop by two-state dynamics at 295 K. Independent of surface preparation, these clusters have an average diameter of similar to 5 atoms. Given prior results for metallic glasses, we suggest that this cluster size is a universal feature. The hopping activation free energy of 0.93 +/- 0.15 eV is rather small, in agreement with a previously untested surface glass model. Hydrogenation quenches the two-state dynamics, apparently by increasing surface crystallinity.

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