Progress in three-terminal heterojunction bipolar transistor solar cells

被引：7

作者：

Antolin, Elisa ^{[1
]}

Zehender, Marius H. ^{[1
]}

Svatek, Simon A. ^{[1
]}

Steiner, Myles A. ^{[2
]}

Martinez, Mario ^{[1
]}

Garcia, Ivan ^{[1
]}

Garcia-Linares, Pablo ^{[1
]}

Warren, Emily L. ^{[2
]}

Tamboli, Adele C. ^{[2
]}

Marti, Antonio ^{[1
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, Avda Complutense 30, Madrid 28040, Spain

[2] Natl Renewable Energy Lab NREL, Golden, CO USA

来源：

PROGRESS IN PHOTOVOLTAICS | 2022年 / 30卷 / 08期

关键词：

base transport factor; bottom interdigitated contact; emitter injection efficiency; heterojunction bipolar transistor solar cell; III-V material; multijunction solar cell; tandem solar cell; LIMITING EFFICIENCIES;

D O I：

10.1002/pip.3536

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Conventional solar cells, including multijunction solar cells, are based on pn junctions as building blocks. In contrast, the three-terminal heterojunction bipolar transistor solar cell (3T-HBTSC) explores the use of a bipolar transistor structure to build a solar cell. The limiting efficiency of this transistor structure equals that of a double-junction solar cell. However, since the 3T-HBTSC does not require tunnel junctions, its minimal structure has only three semiconductor layers, while the minimal structure of a double junction solar cell has six. This work reviews the operation principles of this solar cell and the steps carried out towards its practical implementation. Experimental results on a GaInP/GaAs HBTSC prototype with bottom interdigitated contacts are presented.

引用

页码：843 / 850

页数：8

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