Composite TiN-Ni thin films deposited by reactive magnetron sputter ion-plating

Composite TiN-Ni thin films were deposited by direct-current (DC) magnetron sputter ion-plating from an alloy Ti-48 at% Ni target in a mixture of argon and nitrogen gases at a total pressure of 0.1 Pa onto glass and stainless steel substrates heated to temperatures higher than 250 degrees C. The films deposited at the nitrogen flow Q(N2) greater than or equal to 6.4 seem consisted of a mixture of delta-TiN and fee nickel phases. The effects of negative substrate bias and substrate temperature on the crystal structure of the films were studied. The substrate bias of - 200 V resulted in improved crystallization of films and a smaller difference in size between the TIN and nickel grains, as compared with films deposited onto substrates at floating potential. It was possible to vary the crystal grain size of both phases by varying the substrate temperature in the range 270-430 degrees C. The maximum hardness measured in the films was 10.5 GPa. It is expected that the hardness can be increased by decreasing the content of nickel. (C) 1998 Elsevier Science S.A. All rights reserved.