A reliable and accurate approach to assess NBTI behavior of state-of-the-art pMOSFETs with fast-WLR

被引：9

作者：

Schluender, Christian ^{[1
]}

Vollertsen, Rolf-Peter ^{[1
]}

Gustin, Wolfgang ^{[1
]}

Reisinger, Hans ^{[1
]}

机构：

[1] Infineon Technologies AG, Cent Reliabil Dept, D-81739 Munich, Germany

来源：

ESSDERC 2007: PROCEEDINGS OF THE 37TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE | 2007年

关键词：

D O I：

10.1109/ESSDERC.2007.4430896

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

NBTI is a key challenge of today's technologies and could be assessed so far only by relative long stress durations. The On-the-fly characterization seems to be a proper method for fast-WLR, but shows also some problems. This work describes for the first time the application of OTF in combination with self-heating test structures and a method to correct the initial value without special equipment. Challenges and different solutions are introduced and discussed. We compare data from very fast non standard measurements with fWLR data acquired with regular test equipment. The insight we gained suggests that fWLR provides a suitable means for fast NBTI monitoring.

引用

页码：131 / 134

页数：4

共 11 条

[1]

DENAIS M, IEEE IRW 2004, P121

[2] NBTI degradation: From physical mechanisms to modelling [J].

Huard, V ;

Denais, M ;

Parthasarathy, C .

MICROELECTRONICS RELIABILITY, 2006, 46 (01) :1-23

[3]

KRISHNAN AT, 2003, IEEE INT EL DEV M IE

[4] An introduction to fast wafer level reliability monitoring for integrated circuit mass production [J].

Martin, A ;

Vollertsen, RP .

MICROELECTRONICS RELIABILITY, 2004, 44 (08) :1209-1231

[5] Bias temperature instability assessment of n- and p-channel MOS transistors using a polysilicon resistive heated scribe lane test structure [J].

Muth, W ;

Walter, W .

MICROELECTRONICS RELIABILITY, 2004, 44 (08) :1251-1262

[6] Analysis of NBTI degradation- and recovery-behavior based on ultra fast VT-measurements [J].

Reisinger, H. ;

Blank, O. ;

Heinrigs, W. ;

Muehloff, A. ;

Gustin, W. ;

Schluender, C. .

2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL, 2006, :448-+

[7]

REISINGER H, 2007, IN PRESS T DEV MAT R

[8] On the impact of the NBTI recovery phenomenon on lifetime prediction of modern p-MOSFETs [J].

Schluender, Christian ;

Heinrigs, Wolfgang ;

Gustin, Wolfgang ;

Reisinger, Hans .

2006 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP, FINAL REPORT, 2006, :1-+

[9] Trapping mechanisms in negative bias temperature stressed p-MOSFETs [J].

Schlünder, C ;

Brederlow, R ;

Wieczorek, P ;

Dahl, C ;

Holz, J ;

Röhner, M ;

Kessel, S ;

Herold, V ;

Goser, K ;

Weber, W ;

Thewes, R .

MICROELECTRONICS RELIABILITY, 1999, 39 (6-7) :821-826

[10]

Shen C, 2006, INT EL DEVICES MEET, P69

← 1 2 →