A Pseudo Single-Stage Amplifier With an Adaptively Varied Medium Impedance Node for Ultra-High Slew Rate and Wide-Range Capacitive-Load Drivability

被引:19
作者
Hong, Sung-Wan [1 ]
Cho, Gyu-Hyeong [2 ]
机构
[1] Samsung Elect, Suwon 443742, South Korea
[2] Korea Adv Inst Sci & Technol, Dept Elect Engn, Daejeon 305755, South Korea
关键词
Adaptively varied medium impedance; high slew rate; pole-zero doublets; pseudo single-stage; wide-range capacitive load drivability; NESTED-MILLER COMPENSATION; 3-STAGE AMPLIFIER; FREQUENCY COMPENSATION; MULTISTAGE AMPLIFIERS; BUFFER AMPLIFIER; DRIVERS; TIME;
D O I
10.1109/TCSI.2016.2584919
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a pseudo single-stage (PSS) amplifier with an adaptively varied medium impedance node to achieve an ultra-high slew rate (SR) and at the same time stable operation in a wide capacitive load range. Owing to the characteristics of the proposed technique, this amplifier achieves a 1.1-to-8.67 V/mu s slew rate and a 0.01-to-1.66 MHz unity gain frequency over a 0.1-to-15 nF capacitive load (C-L) with an over 69. phase margin while consuming a total quiescent power of only 7.4 mu W. This chip was fabricated in a 0.18 mu m CMOS process with a silicon area of 0.0021 mm(2).
引用
收藏
页码:1567 / 1578
页数:12
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