HOMO/LUMO alignment at PTCDA/ZnPc and PTCDA/ClInPc heterointerfaces determined by combined UPS and XPS measurements

被引：128
作者：
Schlaf, R
Parkinson, BA
Lee, PA
Nebesny, KW
Armstrong, NR [1 ]
机构：
[1] Univ Arizona, Dept Chem, Tucson, AZ 85721 USA
[2] Colorado State Univ, Dept Chem, Ft Collins, CO 80523 USA
来源：
JOURNAL OF PHYSICAL CHEMISTRY B | 1999年 / 103卷 / 15期
关键词：
D O I：
10.1021/jp982834y
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The offsets between the highest occupied molecular orbitals (HOMO) and the lowest unoccupied molecular orbitals (LUMO) at the 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA)/chloroindium phthalocyanine (ClInPc) and PTCDA/zinc phthalocyanine (ZnPc) organic heterojunctions were estimated from a combination of X-ray and ultraviolet photoemission (XPS,UPS) measurements. This combined method allows an improved determination of the electronic structure of such organic/organic' interfaces due to the separate determination of the band bending (charge redistribution) following heterojunction formation. Both interfaces have large offsets in the onset for photoemission from their HOMO levels (PTCDA/ZnPc: 0.88 eV; PTCDA/CnlInPc: 0.93 eV). Using thin film absorbance data, the corresponding offsets in LUMO levels were estimated to be 0.66 eV (PTCDA/ZnPc) and 0.34 (PTCDA/ClInPc). The ZnPc/PTCDA interface showed a significant interface dipole (0.25 eV) while the ClInPc/PTCDA contact was essentially dipole free.
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收藏
页码：2984 / 2992
页数：9
相关论文
共 65 条
[41]  
2-T
[42]   MOLECULAR-BEAM EPITAXY GROWTH OF THIN-FILMS OF SNS2 AND SNSE2 ON CLEAVED MICA AND THE BASAL PLANES OF SINGLE-CRYSTAL LAYERED SEMICONDUCTORS - REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION, LOW-ENERGY-ELECTRON DIFFRACTION, PHOTOEMISSION, AND SCANNING-TUNNELING-MICROSCOPY ATOMIC-FORCE MICROSCOPY CHARACTERIZATION [J].
SCHLAF, R ;
LOUDER, D ;
LANG, O ;
PETTENKOFER, C ;
JAEGERMANN, W ;
NEBESNY, KW ;
LEE, PA ;
PARKINSON, BA ;
ARMSTRONG, NR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1995, 13 (03) :1761-1767
[43]   Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined X-ray and ultraviolet photoemission measurements [J].
Schlaf, R ;
Parkinson, BA ;
Lee, PA ;
Nebesny, KW ;
Armstrong, NR .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1026-1028
[44]   Experimental determination of quantum dipoles at semiconductor heterojunctions prepared by van der Waals epitaxy: Linear correction term for the electron affinity rule [J].
Schlaf, R ;
Lang, O ;
Pettenkofer, C ;
Jaegermann, W ;
Armstrong, NR .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1997, 15 (03) :1365-1370
[45]   Van der Waals epitaxy of the layered semiconductors SnSe2 and SnS2: Morphology and growth modes [J].
Schlaf, R ;
Armstrong, NR ;
Parkinson, BA ;
Pettenkofer, C ;
Jaegermann, W .
SURFACE SCIENCE, 1997, 385 (01) :1-14
[46]   PHOTOELECTROCHEMICAL INVESTIGATIONS OF MOLECULAR SEMICONDUCTORS - CHARACTERIZATION OF THE CONDUCTION TYPE OF VARIOUS SUBSTITUTED PORPHYRINS [J].
SCHLETTWEIN, D ;
JAEGER, NI ;
WOHRLE, D .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1991, 95 (11) :1526-1530
[47]   Ultrathin films of perylenedianhydride and perylenebis(dicarboximide) dyes on (001) alkali halide surfaces [J].
Schlettwein, D ;
Back, A ;
Schilling, B ;
Fritz, T ;
Armstrong, NR .
CHEMISTRY OF MATERIALS, 1998, 10 (02) :601-612
[48]   CORRELATION OF FRONTIER ORBITAL POSITIONS AND CONDUCTION TYPE OF MOLECULAR SEMICONDUCTORS AS DERIVED FROM UPS IN COMBINATION WITH ELECTRICAL AND PHOTOELECTROCHEMICAL EXPERIMENTS [J].
SCHLETTWEIN, D ;
ARMSTRONG, NR .
JOURNAL OF PHYSICAL CHEMISTRY, 1994, 98 (45) :11771-11779
[49]  
SCHLETTWEIN D, 1994, MOL CRYST LIQ CRYST, V253, P161
[50]   ELECTRONIC STATES OF VAPOR-DEPOSITED ELECTRON AND HOLE TRANSPORT AGENTS AND LUMINESCENT MATERIALS FOR LIGHT-EMITTING-DIODES [J].
SCHMIDT, A ;
ANDERSON, ML ;
ARMSTRONG, NR .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) :5619-5625
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