Epitaxial growth of CeO2 thin film on cube textured NiW substrate using a propionate-based metalorganic deposition (MOD) method

被引：14

作者：

Ciontea, L. ^{[1
]}

Ristoiu, T. ^{[1
]}

Mos, R. B. ^{[1
]}

Nasui, M. ^{[1
]}

Petrisor, T., Jr. ^{[1
]}

Gabor, M. S. ^{[1
]}

Mancini, A. ^{[2
]}

Rufoloni, A. ^{[2
]}

Celentano, G. ^{[2
]}

Petrisor, T. ^{[1
]}

机构：

[1] Tech Univ Cluj Napoca, Mat Sci Lab, Cluj Napoca, Romania

[2] ENEA Frascati, I-00044 Frascati, Roma, Italy

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2012年 / 133卷 / 2-3期

关键词：

Thin films; Epitaxial growth; Electron microscopy; Surface properties; BEAM-ASSISTED DEPOSITION; CRITICAL-CURRENT DENSITY; BUFFER LAYERS; SUPERCONDUCTING TAPES; STABILIZED-ZIRCONIA; YBA2CU3O7; ALLOY; MGO; CONDUCTORS; PROGRESS;

D O I：

10.1016/j.matchemphys.2012.01.092

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The CeO2 films were epitaxially grown on (001)[100]Ni-W biaxially textured substrate using a propionate-based metalorganic deposition (MOD) method. The as deposited CeO2 films exhibit a sharp biaxial texture, with a full width at half maximum (FWHM) of phi and omega-scans of about 7.15 degrees and 7.8 degrees, respectively. The in-plane and out-of plane epitaxial relationship are [001]CeO2//[001]Ni-W and [100]CeO2//[110]Ni-W, respectively. The morphology of the films is strongly correlated with the film thickness and crystallization temperature. Thus, the 0.3 mu m thick film crystallized at 1100 degrees C has a smooth surface free of cracks or voids with a root mean square roughness (RMS) of about 2.5 nm, whilst the 1.1 mu m thick film presents many cracks and a low density of voids. The cracks along the substrate grain boundaries observed in the thicker films take place in the already crystallized film during the rapid cooling process due to difference between the thermal expansion coefficients of the film and metallic Ni-W substrate. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：772 / 778

页数：7

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