A low-power high-speed InP microdisk modulator heterogeneously integrated on a SOI waveguide

被引：16

作者：

Hofrichter, Jens ^{[1
]}

Raz, Oded ^{[2
]}

La Porta, Antonio ^{[1
]}

Morf, Thomas ^{[1
]}

Mechet, Pauline ^{[3
]}

Morthier, Geert ^{[3
]}

De Vries, Tjibbe ^{[2
]}

Dorren, Harm J. S. ^{[2
]}

Offrein, Bert J. ^{[1
]}

机构：

[1] IBM Res Zurich, CH-8803 Ruschlikon, Switzerland

[2] Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands

[3] Univ Ghent, IMEC, INTEC, B-9000 Ghent, Belgium

来源：

OPTICS EXPRESS | 2012年 / 20卷 / 09期

关键词：

SILICON-ON-INSULATOR; OPTICAL MODULATOR; ULTRALOW-ENERGY; INJECTION; COMPACT; LASERS;

D O I：

10.1364/OE.20.009363

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report on the modulation characteristics of indium phosphide (InP) based microdisks heterogeneously integrated on a silicon-on-insulator (SOI) waveguide. We present static extinction ratios and dynamic operation up to 10 Gb/s. Operation with a bit-error rate below 1 x 10(-9) is demonstrated at 2.5, 5.0 and 10.0 Gb/s and the performance is compared with that of a commercial modulator. Power penalties are analyzed with respect to the pattern length. The power consumption is calculated and compared with state-of-the-art integrated modulator concepts. We demonstrate that InP microdisk modulators combine low-power and low-voltage operation with low footprint and high-speed. Moreover, the devices can be fabricated using the same technology as for lasers, detectors and wavelength converters, making them very attractive for co-integration. (C) 2012 Optical Society of America

引用

页码：9363 / 9370

页数：8

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