LEDs for lighting: Basic physics and prospects for energy savings

被引:81
作者
Gayral, Bruno [1 ]
机构
[1] Univ Grenoble Alpes, CEA, INAC Pheliqs, F-38000 Grenoble, France
关键词
LED; Semiconductor; Lighting; GaN; MG-DOPED GAN; EMITTING-DIODES; BUFFER LAYER; JUNCTIONS; EMISSION; GROWTH; CRYSTALS; QUALITY; FILMS;
D O I
10.1016/j.crhy.2017.09.001
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
In 2014, Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura received the Nobel Prize in Physics for "the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources". Indeed, in the recent years, Light-Emitting Diodes (LEDs) have progressively made their way to the home lighting market, as well as to other mass markets. This article aims at giving an insight on LEDs physics, on the key inventions that led to the 2014 Nobel Prize and on the prospects for energy savings that LEDs could allow. (C) 2017 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.
引用
收藏
页码:453 / 461
页数:9
相关论文
共 24 条
[1]   Breakthroughs in improving crystal quality of GaN and invention of the p-n junction blue-light-emitting diode [J].
Akasaki, Isamu ;
Amano, Hiroshi .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (12) :9001-9010
[2]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[3]   METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].
AMANO, H ;
SAWAKI, N ;
AKASAKI, I ;
TOYODA, Y .
APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355
[4]   COHERENT (VISIBLE) LIGHT EMISSION FROM GA(AS1-XPX) JUNCTIONS [J].
HOLONYAK, N ;
BEVACQUA, SF .
APPLIED PHYSICS LETTERS, 1962, 1 (04) :82-83
[5]   Status and future of high-power light-emitting diodes for solid-state lighting [J].
Krames, Michael R. ;
Shchekin, Oleg B. ;
Mueller-Mach, Regina ;
Mueller, Gerd O. ;
Zhou, Ling ;
Harbers, Gerard ;
Craford, M. George .
JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175
[6]   INJECTED LIGHT EMISSION OF SILICON CARBIDE CRYSTALS [J].
LEHOVEC, K ;
ACCARDO, CA ;
JAMGOCHIAN, E .
PHYSICAL REVIEW, 1951, 83 (03) :603-607
[7]  
Losev O. V., 1929, USSR patent, Patent No. 12191
[8]  
Lossev OV, 1928, PHILOS MAG, V6, P1024
[9]   VIOLET LUMINESCENCE OF MG-DOPED GAN [J].
MARUSKA, HP ;
STEVENSON, DA ;
PANKOVE, JI .
APPLIED PHYSICS LETTERS, 1973, 22 (06) :303-305
[10]   CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].
NAKAMURA, S ;
MUKAI, T ;
SENOH, M .
APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689