Electronic switching in phase-change memories

被引：510
作者：
Pirovano, A [1 ]
Lacaita, AL
Benvenuti, A
Pellizzer, F
Bez, R
机构：
[1] STMicroelect, Cent Res & Dev, I-20041 Agrate Brianza, Italy
[2] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy
[3] Politecn Milan, IFN, CNR Sez Milano, I-20133 Milan, Italy
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 03期
关键词：
chalcogenide; nonvolatile memories; phase-change memory (PCM) devices;
D O I：
10.1109/TED.2003.823243
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is proposed. Numerical simulations provide, for the first time, a quantitative description of the peculiar current-voltage curve of a Ge2Sb2Te5 resistor, in good agreement with measurements performed on test devices.
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页码：452 / 459
页数：8
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