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- [21] Improved Inductive Feed-Forward for Fast Turn-On of Power Semiconductors during Hard Switching 2019 21ST EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE '19 ECCE EUROPE), 2019,
- [22] A New Method of Switching Loss Evaluation for GaN HEMTs in Half-Bridge Configuration 2020 THIRTY-FIFTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2020), 2020, : 647 - 651
- [23] Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard-Switching Conditions 2020 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2020,
- [24] Low Voltage GaN-Based Gate Driver to Increase Switching Speed of Paralleled 650 V E-mode GaN HEMTs 2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE), 2020,
- [26] Energy-based Method to Estimate the Partial Hard Turn-on Loss of Complementary SiC MOSFET from Experiment 2024 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, APEC, 2024, : 1114 - 1119
- [27] Loss Separation in Hard- and Soft-Switching GaN HEMTs operated in a 10 kW Isolated DC/DC Converter 2020 22ND EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'20 ECCE EUROPE), 2020,
- [28] Effect of Substrate Termination on Switching Loss and Switching Time using 600 V GaN-on-Si HEMTs with Integrated Gate Driver in Half-Bridges 2017 IEEE 5TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA), 2017, : 257 - 264